Silicon Junction FETs (Small Signal)
2SJ163
Silicon P-Channel Junction FET
For general switching
Complementary to 2SK1103
0.65鹵0.15
+0.2
unit: mm
0.65鹵0.15
2.8
鈥?.3
1.5
鈥?.05
+0.25
s
Features
2.9
鈥?.05
1.9鹵0.2
+0.2
q
Low ON-resistance
q
Low-noise characteristics
0.95
1
0.95
3
0.4
鈥?.05
+0.1
s
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
鈭?0
鈭?0
150
150
鈭?5
to +150
Unit
0.8
2
1.45
V
mA
mA
mW
擄C
擄C
1.1
鈥?.1
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol (Example): 4M
s
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
Conditions
V
DS
=
鈭?0V,
V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
G
= 10碌A(chǔ), V
DS
= 0
V
DS
=
鈭?0V,
I
D
=
鈭?0碌A(chǔ)
V
DS
=
鈭?0V,
I
D
=
鈭?mA,
f = 1kHz
V
DS
=
鈭?0mV,
V
GS
= 0
V
DS
=
鈭?0V,
V
GS
= 0, f = 1MHz
1.8
65
1.5
2.5
300
12
4
3.5
min
鈭?/div>
0.2
typ
max
鈭?
10
Unit
mA
nA
V
V
mS
鈩?/div>
pF
pF
Input capacitance (Common Source) C
iss
Reverse transfer capacitance (Common Source) C
rss
*
I
DSS
rank classification
Runk
I
DSS
(mA)
O
鈭?/div>
0.2 to
鈭?
4MO
P
鈭?/div>
0.6 to
鈭?.5
4MP
Q
鈭?
to
鈭?
4MQ
R
鈭?.5
to
鈭?
4MR
Marking Symbol
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.16
鈥?.06
+0.2
+0.1
1
1
2
