Silicon Junction FETs (Small Signal)
2SJ0164
(2SJ164)
Silicon P-Channel Junction FET
For switching
Complementary to 2SK1104
4.0
鹵0.2
2.0
鹵0.2
(0.8)
3.0
鹵0.2
unit: mm
G
Low ON-resistance
G
Low-noise characteristics
I
Absolute Maximum Ratings
(Ta = 25擄C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
65
鈭?0
鈭?0
300
150
鈭?5
to +150
Unit
V
mA
mA
mW
擄C
擄C
1
0.45
+0.20
鈥?.10
15.6
鹵0.5
(0.8)
0.75 max.
7.6
I
Features
(2.5) (2.5)
0.45
+0.20
鈥?.10
0.7
鹵0.1
2
3
1: Source
2: Gate
3: Drain
NS-B1 Package
I
Electrical Characteristics
(Ta = 25擄C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Drain to Source ON-resistance
Symbol
I
DSS*
I
GSS
V
GDS
V
GSC
| Y
fs
|
R
DS(on)
C
oss
Conditions
V
DS
=
鈭?0V,
V
GS
= 0
V
GS
= 30V, V
DS
= 0
I
G
= 10碌A(chǔ), V
DS
= 0
V
DS
=
鈭?0V,
I
D
=
鈭?0碌A(chǔ)
V
DS
=
鈭?0V,
I
D
=
鈭?mA,
f = 1kHz
V
DS
=
鈭?0mV,
V
GS
= 0
V
DS
=
鈭?0V,
V
GS
= 0, f = 1MHz
1.8
65
1.5
2.5
300
10
3
3
3.5
min
鈭?/div>
0.2
typ
max
鈭?
10
Unit
mA
nA
V
V
mS
鈩?/div>
pF
pF
pF
Input capacitance (Common Source) C
iss
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source) C
rss
*
I
DSS
rank classification
Runk
I
DSS
(mA)
O
鈭?/div>
0.2 to
鈭?
P
鈭?/div>
0.6 to
鈭?.5
Q
鈭?
to
鈭?
R
鈭?.5
to
鈭?
Note) The part number in the parenthesis shows conventional part number.
237
1
2
3
