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ADE鈥?08鈥?93 (Z)

2SH20

Silicon N-Channel IGBT

1st. Edition

Feb. 1995

Application

High speed power switching

TO鈥?P

Features

鈥?High speed switching

鈥?Low on saturation voltage

1

2

3

1

2

3

1. Gate

2. Collector

3. Emitter

Table 1 Absolute Maximum Ratings

(Ta = 25擄C)

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Collector peak current

Collector dissipation

Channel temperature

Storage temperature

Symbol

V

CES

Ratings

600

鹵20

36

60

100

150

鈥?5 to +150

Unit

V

A

W

擄C

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ic(peak)

P

C

*

T

j

I

C

V

GES

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Tstg

鈥斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€斺€?/div>

* Value at Tc = 25擄C

1

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