鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1
Collector-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
P
180 to 270
Q
230 to 380
R
340 to 600
Symbol
V
CEO
V
EBO
I
CBO
I
EBO
h
FE1 *2
h
FE
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
10 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
= 2 V, I
C
= 0.5 A
V
CE
= 2 V, I
C
= 2 A
I
C
=
3 A, I
B
=
0.1 A
V
CB
=
6 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
20 V, I
E
=
0, f
=
1 MHz
150
50
180
150
1
V
MHz
pF
Min
20
7
0.1
0.1
600
Typ
Max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJC00201BED
(3.2)
1
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