UTC 2SD965B
LOW VOLTAGE HIGH CURRENT
NPN TRANSISTOR
FEATURES
* Collector current up to 5A
* 2SD965B : Collector-Emitter voltage up to 30 V
NPN EPITAXIAL SILICON TRANSISTOR
APPLICATIONS
* Audio amplifier
* Flash unit of camera
* Switching circuit
1
TO-92
1: EMITTER
2: COLLECTOR 3: BASE
*Pb-free plating product number: 2SD965BL
ABSOLUTE MAXIMUM RATINGS
( Ta=25擄C )
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector dissipation(Ta=25擄C)
Collector current
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
Pc
Ic
T
j
T
STG
RATINGS
40
30
7
750
5
150
-65 ~ +150
UNIT
V
V
V
mW
A
擄C
擄C
ELECTRICAL CHARACTERISTICS
(Ta=25擄C,unless otherwise specified)
PARAMETER
SYMBOL
Collector-base breakdown voltage
B
VCBO
Collector-emitter breakdown
BV
CEO
voltage
Emitter-base breakdown voltage
BV
EBO
Collector cut-off current
I
CBO
Emitter cut-off current
I
EBO
h
FE 1
DC current gain(note)
h
FE 2
h
FE 3
Collector-emitter saturation voltage V
CE
(sat)
Current gain bandwidth product
f
T
Output capacitance
Cob
TEST CONDITIONS
Ic=100碌A(chǔ),IE=0
Ic=1mA,IB=0
I
E
=10碌A(chǔ),Ic=0
V
CB
=30V,I
E
=0
V
EB
=7V,Ic=0
V
CE
=2V,Ic=1mA
V
CE
=2V,Ic=0.5A
V
CE
=2V,Ic=2A
Ic=3A, IB= 0.1A
V
CE
=6V,Ic=50mA
V
CB
=20V,I
E
=0, f=1MHz
MIN
40
30
7
200
200
200
230
150
150
50
800
1
V
MHz
pF
TYP
MAX
UNIT
V
V
V
nA
nA
CLASSIFICATION OF hFE2
RANK
RANGE
Q
230-380
R
340-600
S
560-800
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R201-078,B
www.unisonic.com.tw
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