Transistor
2SB766, 2SB766A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD874 and 2SD874A
Unit: mm
s
Features
q
q
2.6鹵0.1
0.4max.
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB766
2SB766A
2SB766
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
(Ta=25藲C)
Ratings
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
鈥?.5
鈥?
1
150
鈥?5 ~ +150
Unit
V
45擄
1.0
鈥?.2
+0.1
Symbol
V
CBO
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
3
2
1
4.0
鈥?.20
0.4鹵0.04
emitter voltage 2SB766A
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
V
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?2
Mini Power Type Package
marking
Marking symbol :
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
A
(2SB766)
B
(2SB766A)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
2SB766
2SB766A
2SB766
2SB766A
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?00mA
*2
V
CE
= 鈥?V, I
C
= 鈥?A
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 50mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
85
50
鈥?0.2
鈥?0.85
200
20
*2
min
typ
max
鈥?0.1
Unit
碌A(chǔ)
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
FE1
Rank classification
340
鈥?0.4
鈥?.2
MHz
30
pF
Pulse measurement
Rank
h
FE1
Marking
Symbol
2SB766
2SB766A
Q
85 ~ 170
AQ
BQ
R
120 ~ 240
AR
BR
S
170 ~ 340
AS
BS
2.5鹵0.1
+0.25
Large collector power dissipation P
C
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
V
V
V
V
1