2SD717
GENERAL DESCRIPTION
Silicon Epitaxial Planar Transistor
Silicon NPN high frequency, high power transistors
in
a plastic envelope, primarily for use in audio and
general purpose
QUICK REFERENCE DATA
SYMBOL
TO-3P(I)D
CONDITIONS
V
BE
= 0V
TYP
MAX
70
70
10
80
2
2.0
1.0-
UNIT
V
V
A
A
W
V
V
s
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Diode forward voltage
Fall time
T
mb
25
I
C
= 4.0A; I
B
=0.4A
I
F
= 3.5A
I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=30V
-
-
-
-
-
-
1.5
0.4
LIMITING VALUES
SYMBOL
V
CESM
V
CEO
V
EBO
I
C
I
B
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Emitter-base oltage (open colloctor)
Collector current (DC)
Base current (DC)
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0V
MIN
-
-
-
-
-
-55
-
Tmb 25
MAX
70
70
5
10
2.5
80
150
150
UNIT
V
V
V
A
A
W
ELECTRICAL CHARACTERISTICS
SYMBOL
I
CBO
I
EBO
V
(BR)CEO
V
CEsat
h
FE
f
T
C
c
t
on
t
s
t
f
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage
Collector-emitter saturation voltages
DC current gain
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
On times
Tum-off storage time
Fall time
CONDITIONS
V
CB
=70V
V
EB
=5V
I
C
=1mA
I
C
= 4.0A; I
B
= 0.4A
I
C
= 1A; V
CE
= 5V
I
C
= 1A; V
CE
= 12V
V
CB
= 10V
I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=30V
I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=30V
I
C
=4A,I
B1
=-I
B2
=0.4A,V
CC
=30V
TYP
-
-
70
-
50
10
350
0.3
2.5
0.4
MAX
0.2
0.2
3
240
-
-
UNIT
mA
mA
V
V
MHz
pF
us
us
us
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage:
http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
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