Transistor
2SD662, 2SD662B
Silicon NPN epitaxial planer type
For high breakdown voltage general amplification
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
Features
q
q
q
1.5 R0.9
R0.9
0.85
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD662
2SD662B
2SD662
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Symbol
V
CBO
(Ta=25藲C)
Ratings
250
400
200
400
5
100
70
600
150
鈥?5 ~ +150
Unit
3
0.55鹵0.1
1.25鹵0.05
0.45鹵0.05
2
1
V
2.5
2.5
emitter voltage 2SD662B
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter
voltage
2SD662
2SD662B
(Ta=25藲C)
Symbol
I
CEO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CE
= 100V, I
B
= 0
I
C
= 100碌A, I
B
= 0
I
E
= 10碌A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
80
5
10
200
400
5
30
30
220
150
1.2
V
MHz
pF
min
typ
max
2
Unit
碌A
V
V
Emitter to base voltage
Forward current
transfer ratio
2SD662
2SD662B
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
*
h
FE
Rank classification
P
30 ~ 100
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
4.1鹵0.2
High collector to emitter voltage V
CEO
.
High transition frequency f
T
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.4
1.0鹵0.1
R
0.
4.5鹵0.1
7
1
1
2
