Transistor
2SB643, 2SB644
Silicon PNP epitaxial planer type
For low-power general amplification
Complementary to 2SD638 and 2SD639
6.9鹵0.1
1.5
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
Unit: mm
s
Features
q
1.5 R0.9
R0.9
1.0鹵0.1
0.85
Parameter
Collector to
base voltage
Collector to
2SB643
2SB644
2SB643
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
鈥?
鈥?0.5
600
150
鈥?5 ~ +150
Unit
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
V
3
2
1
emitter voltage 2SB644
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
V
V
A
A
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
EIAJ:SC鈥?1
M Type Mold Package
2.5
2.5
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
2SB643
2SB644
2SB643
2SB644
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 鈥?0V, I
E
= 0
V
CE
= 鈥?0V, I
B
= 0
I
C
= 鈥?0碌A(chǔ), I
E
= 0
I
C
= 鈥?mA, I
B
= 0
I
E
= 鈥?0碌A(chǔ), I
C
= 0
V
CE
= 鈥?0V, I
C
= 鈥?50mA
*2
V
CE
= 鈥?0V, I
C
= 鈥?00mA
*2
I
C
= 鈥?00mA, I
B
= 鈥?0mA
*2
V
CB
= 鈥?0V, I
E
= 10mA, f = 200MHz
V
CB
= 鈥?0V, I
E
= 0, f = 1MHz
鈥?0
鈥?0
鈥?5
鈥?0
鈥?
85
40
90
鈥?0.35
200
6
*2
min
typ
max
鈥?00
鈥?
4.1鹵0.2
s
Absolute Maximum Ratings
(Ta=25藲C)
R
0.
4.5鹵0.1
7
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.4
Unit
nA
碌A(chǔ)
V
V
V
340
鈥?0.6
V
MHz
15
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
85 ~ 170
R
120 ~ 240
S
170 ~ 340
Rank
h
FE1
1
1
2
