Transistor
2SD637
Silicon NPN epitaxial planer type
For low-power general amplification
Unit: mm
6.9鹵0.1
1.5
2.5鹵0.1
1.0
1.0
2.4鹵0.2 2.0鹵0.2 3.5鹵0.1
s
q
q
q
Features
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
1.5 R0.9
R0.9
0.4
1.0鹵0.1
R
0.
0.85
0.55鹵0.1
0.45鹵0.05
1.25鹵0.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
60
50
7
200
100
400
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1:Base
2:Collector
3:Emitter
2.5
2.5
3
2
1
EIAJ:SC鈥?1
M Type Mold Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
7
160
0.3
150
3.5
460
0.5
V
MHz
pF
min
typ
max
1
1
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*
h
FE
Rank classification
Q
160 ~ 260
R
210 ~ 340
S
290 ~ 460
h
FE
Rank
4.1鹵0.2
4.5鹵0.1
7
1
1
2
3
