Transistor
2SD601A
Silicon NPN epitaxial planer type
For general amplification
Complementary to 2SB709A
2.8
鈥?.3
+0.2
Unit: mm
s
q
q
q
Features
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
(Ta=25藲C)
Ratings
60
50
7
200
100
200
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
2.9
鈥?.05
0.65鹵0.15
1.5
鈥?.05
+0.25
0.65鹵0.15
0.95
1
1.9鹵0.2
+0.2
0.95
3
0.4
鈥?.05
+0.1
2
1.45
+0.2
1.1
鈥?.1
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1:Base
2:Emitter
3:Collector
JEDEC:TO鈥?36
EIAJ:SC鈥?9
Mini Type Package
Marking symbol :
Z
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Collector output capacitance
*
h
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
CE(sat)
f
T
NV
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 2V, I
C
= 100mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 鈥?mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k鈩? Function = FLAT
V
CB
= 10V, I
E
= 0, f = 1MHz
60
50
7
160
90
0.1
150
110
3.5
0.3
V
MHz
mV
pF
460
min
typ
max
0.1
100
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
FE1
Rank classification
Rank
h
FE1
Q
160 ~ 260
ZQ
R
210 ~ 340
ZR
S
290 ~ 460
ZS
Marking Symbol
0 to 0.1
0.1 to 0.3
0.4鹵0.2
0.8
s
Absolute Maximum Ratings
0.16
鈥?.06
+0.1
1
1
2
