2SD2671
Transistors
Low frequency amplifier
2SD2671
Application
Low frequency amplifier
Driver
External dimensions
(Unit : mm)
TSMT3
1.0MAX
2.9
0.4
0.85
0.7
Features
1) A collector current is large.
2) V
CE(sat)
: max. 370mV
At lc=1.5A / l
B
=75mA
(1) Base
(2) Emitter
(3) Collector
(3)
1.6
2.8
0~0.1
0.3~0.6
(1)
(2)
0.95 0.95
1.9
0.16
Each lead has same dimensions
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emiter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperautre
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
2
4
500
1
鈭?
150
鈭?5
to
+150
Unit
V
V
V
A
A
鈭?
mW
W
擄C
擄C
鈭?
Single pluse, Pw=1ms
鈭?
Mounted on a 25脳25脳
t
0.8mm Ceramic substrate
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltae
Collector-emitter breakdown voltae
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Collector output capacitance
鈭?/div>
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
30
6
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
180
鈭?/div>
280
20
Max.
鈭?/div>
鈭?/div>
鈭?/div>
100
100
370
680
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
nA
mV
鈭?/div>
MHz
pF
Conditions
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=30V
V
EB
=6V
I
C
=1.5A,
I
B
=75mA
V
CE
=2V,
I
C
=200mA
鈭?/div>
V
CE
=2V,
I
E
=鈭?00mA,
f=100MHz
鈭?/div>
V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.B
1/2
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