1) A collector current is large.
鈮?/div>
350mV
At I
C
= 1A / I
B
= 50mA
(3)
1.6
0~0.1
0.3~0.6.
ROHM : TSMT3
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Packaging specifications
Unit
V
V
V
A
A
鈭?
mW
W
擄C
擄C
Package
Code
Type
2SD2657
Basic ordering unit (pieces)
Taping
TL
3000
2.8
(2)
(1)
0.95 0.95
1.9
2.9
0.16
Abbreviated symbol
:
FZ
(1) Emitter
(2) Base
(3) Collector
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
30
30
6
1.5
3
500
1
鈭?
150
鈭?5
to
+150
鈭?
Single pulse, P
W
=1ms
鈭?
Mounted on a 25脳25脳
t
0.8mm Ceramic substrate
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
鈭?/div>
Pulsed
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
30
30
6
鈭?/div>
鈭?/div>
鈭?/div>
270
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
140
鈭?/div>
300
11
Max.
鈭?/div>
鈭?/div>
鈭?/div>
100
100
350
680
鈭?/div>
鈭?/div>
Unit
V
V
V
nA
nA
mV
鈭?/div>
MHz
pF
Conditions
I
C
=10碌A(chǔ)
I
C
=1mA
I
E
=10碌A(chǔ)
V
CB
=30V
V
EB
=6V
I
C
=1A,
I
B
=50mA
V
CE
=2V,
I
C
=100mA
鈭?/div>
V
CE
=2V,
I
E
=鈭?00mA,
f=100MHz
鈭?/div>
V
CB
=10V,
I
E
=0A,
f=1MHz
Rev.A
1/2
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