2SD2638
TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type
2SD2638
Horizontal Deflection Output for Color TV, Digital TV.
High Speed Switching Applications.
路
路
路
High voltage: V
CBO
= 1700 V
Low saturation voltage: V
CE (sat)
= 5 V (max)
High speed: t
f
= 0.8 碌s (max)
Unit: mm
Maximum Ratings
(Tc
=
25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
1700
750
5
7
14
3.5
50
150
-55~150
Unit
V
V
V
A
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
鈥?/div>
鈥?/div>
2-16E3A
Equivalent Circuit
1. Base
50
W
(typ.)
2. Collector
Weight: 5.5 g (typ.)
3. Emitter
Electrical Characteristics
(Tc
=
25擄C)
Characteristics
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward voltage (damper diode)
Transition frequency
Collector output capacitance
Switching time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
(BR) EBO
h
FE
(1)
h
FE
(2)
V
CE (sat)
V
BE (sat)
V
F
f
T
C
ob
t
stg
t
f
Test Condition
V
CB
=
1700 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
I
E
=
400 mA, I
C
=
0
V
CE
=
5 V, I
C
=
1 A
V
CE
=
5 V, I
C
=
5.5 A
I
C
=
5.5 A, I
B
=
1.2 A
I
C
=
5.5 A, I
B
=
1.2 A
I
F
=
7 A
V
CE
=
10 V, I
C
=
0.1 A
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
I
CP
=
5.5 A, I
B1 (end)
=
1.1 A,
f
H
=
15.75 kHz
Min
戮
66
5
8
4.5
戮
戮
戮
戮
戮
戮
戮
Typ.
戮
戮
戮
戮
戮
戮
1.0
1.3
2
125
7
0.4
Max
1
200
戮
25
7.5
5
1.5
2
戮
戮
9
0.8
V
V
V
MHz
pF
ms
Unit
mA
mA
V
1
2001-11-27
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