鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1, 2
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
R
on
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
CE
= 2 V, I
C
= 0.5 A
I
C
=
0.5 A, I
B
=
20 mA
I
C
=
0.5 A, I
B
=
50 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
Min
25
20
12
0 to 0.1
Typ
Max
Unit
V
V
V
100
200
0.14
800
0.40
1.2
200
10
1.0
nA
錚?/div>
V
V
MHz
pF
鈩?/div>
Collector-emitter saturation voltage
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse
*3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
*3: R
on
Measuremet circuit
Rank
h
FE
R
200 to 350
S
300 to 500
T
400 to 800
I
B
=
1 mA
1 k鈩?/div>
f
=
1 kHz
V
=
0.3 V
V
B
V
V
V
A
R
on
=
V
B
脳
1 000 (鈩?
V
A
鈭?/div>
V
B
0.2
鹵0.1
Publication date: February 2003
SJC00284BED
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2
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