0.15 min.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE
V
CE(sat)
f
T
NV
Conditions
I
C
=
10
碌A,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
碌A,
I
C
=
0
V
CB
=
60 V, I
E
=
0
V
CE
=
60 V, I
B
=
0
V
CE
= 10 V, I
C
= 2 mA
I
C
=
10 mA, I
B
=
1 mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CE
= 10 V, I
C
= 1 mA, G
V
= 80 dB
R
g
= 100 k鈩? Function = FLAT
400
0.05
200
80
Min
100
100
15
0.1
1.0
1 200
0.20
Typ
Max
Unit
V
V
V
碌A
碌A
錚?/div>
V
MHz
mV
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
0.15 max.
Publication date: June 2004
SJC00307AED
1
next