2SD2618
Transistors
Power Transistor (80V, 4A)
2SD2618
!Features
1) Darlington connection for a high h
FE
.
2) Built-in resistor between base and emitter.
3) Built-in damper doide.
4) Complements the 2SB1676.
!Circuit
diagram
C
B
R
E
R
B
C
E
300鈩?/div>
: Base
: Collector
: Emitter
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
80
80
7
4
6
2
30
150
鈭?5~+150
Unit
V
V
V
A (DC)
A (t = 100ms)
W
W (Tc = 25擄C)
擄C
擄C
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2618
TO-220FN
1k~10k
-
500
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
80
80
-
-
-
1000
-
-
Typ.
-
-
-
-
-
-
40
35
Max.
-
-
100
10
1.5
10000
-
-
Unit
V
V
碌A
碌A
V
-
MHz
pF
I
C
= 50碌A
I
C
=
鈭?mA
V
CB
= 80V
V
EB
= 5V
I
C
/I
B
= 2A/4mA
V
CE
/I
C
= 3V/2A
V
CE
= 5V , I
E
=
鈭?.2A
, f = 10MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Conditions
*
1
*
1
*
2
*
1 Measured using pulse current.
*
2 Transition frequency of the device.
1
