2SD2616
Transisitors
Power Transistor (100V, 5A)
2SD2616
!Features
1) Low saturation voltage, typically V
CE(sat)
= -0.3V at I
C
/ I
B
=3A / 0.3A.
2) Excellent h
FE
current characteristics.
3) Pc=30W. (Tc=25擄C)
!Absolute
maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
100
5
5
10
2
30
150
-55~+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25藲C)
藲C
藲C
*
*
Single pulse, Pw=100ms
!Packaging
specifications and Hfe
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2616
TO-220FN
E
-
500
!Electrical
characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
100
100
5
-
-
-
-
100
-
-
Typ.
-
-
-
-
-
0.3
-
-
8
100
Max.
-
-
-
10
10
1.0
1.5
200
-
-
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
-
MHz
pF
I
C
=50碌A(chǔ)
I
C
=1mA
I
E
=50碌A(chǔ)
V
CB
=100V
V
EB
=5V
I
C
/I
B
=3A/0.3A
I
C
/I
B
=3A/0.3A
V
CE
/I
C
=5V/1A
V
CE
=5V , I
E
=-0.5A , f=5MHz
V
CB
=10V , I
E
=0A , f=1MHz
Conditions
*
*
*
Transition frequency
Output capacitance
*
Measured using pulse current.
1
