2SD2615
Transistors
Power Transistor (120V, 6A)
2SD2615
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1674.
!Circuit
diagram
C
B
R
1
R
1
R
2
5.0k鈩?/div>
300鈩?/div>
R
2
E
B : Base
C : Collector
E : Emitter
!Absolute
maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Single pulse,
Pw
=
100ms
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
120
120
6
6
10
2
30
150
鈭?5 鈭?+150
Unit
V
V
V
A(DC)
A(Pulse)
W
W(Tc=25擄C)
擄C
擄C
*
!Packaging
specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2615
TO-220FN
2K鈭?0K
鈭?/div>
500
!Electrical
characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
鈭?
Measured using pulse current
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
120
120
鈭?/div>
鈭?/div>
鈭?/div>
2K
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
40
50
Max.
鈭?/div>
鈭?/div>
100
3
1.5
20K
鈭?/div>
鈭?/div>
Unit
V
V
碌A
mA
V
鈭?/div>
MHz
pF
I
C
=
50碌A
I
C
=
5mA
V
CB
=
120V
V
EB
=
5V
I
C
/I
B
=
3A/6mA
V
CE
/I
C
=
3V/2A
Conditions
鈭?
鈭?
鈭?
V
CE
=
5V
, I
E
=
鈭?.2A
, f
=
10MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
鈭?/div>
2
Transition frequency of the device.
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