2SD2614
Transistors
Medium Power Transistor
(Motor, Relay drive)
(60鹵10V, 5A)
2SD2614
!
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to
"L" loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
!
External dimensions
(Units : mm)
10.0
4.5
蠁
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60鹵10
60鹵10
6
5
10
2
25
150
鈭?5~+150
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc = 25擄C)
擄C
擄C
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
ROHM : TO-220FN
*
*
Single pulse
Pw = 10ms
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2614
TO-220FN
2k~30k
-
500
!
Circuit diagram
C
B
R
1
E : Emitter
B : Base
C : Collector
R
2
E
R
1
3.5k鈩?/div>
R
2
300鈩?/div>
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
Cob
Min.
50
50
-
-
-
2000
-
Typ.
-
-
-
-
-
-
75
Max.
70
70
10
3
1.5
30000
-
Unit
V
V
碌A(chǔ)
mA
V
-
pF
I
C
= 50碌A(chǔ)
I
C
= 5mA
V
CB
= 40V
V
EB
= 5V
I
C
/I
B
= 2A/2mA
V
CE
/I
C
= 3V/2A
V
CB
= 10V , I
E
= 0A , f = 1MHz
Conditions
*
*
*
Measured using pulse current.
1
