2SD2607
Transistors
Power Transistor (100V, 8A)
2SD2607
!
Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1668.
!
External dimensions
(Units: mm)
10.0
4.5
蠁
3.2
2.8
15.0
12.0
8.0
5.0
1.2
14.0
1.3
0.8
!
Absolute maximum ratings
(Ta = 25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
100
7
8
10
2
30
150
鈭?5~+150
Unit
V
V
V
A (DC)
A (Pulse)
W
W (Tc = 25擄C)
擄C
擄C
2.54
2.54
(1) (2) (3)
(1) (2) (3)
0.75
2.6
ROHM : TO-220FN
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
*
*
Single pulse, Pw = 10ms
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2607
TO-220FN
1k~20k
-
500
!
Circuit diagram
B
C
R
1
R
2
E
R1
R2
5k鈩?/div>
300k鈩?/div>
B : Base
C : Collector
E : Emitter
!
Electrical characteristics
(Ta = 25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
100
100
-
-
-
1000
-
-
Typ.
-
-
-
-
-
-
40
50
Max.
-
-
10
3
1.5
20000
-
-
Unit
V
V
碌A
mA
V
-
MHz
pF
I
C
= 50碌A
I
C
= 5mA
V
CB
= 100V
V
EB
= 5V
I
C
/I
B
= 3A/6mA
V
CE
/I
C
= 3V/2A
V
CE
= 5V , I
E
=
鈭?.2A
, f = 10MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
Conditions
*
1
*
1
*
2
*
1 Measured using pulse current.
*
2 Transition frequency of the device.
1
