Power Transistors
2SD2606
Silicon NPN diffusion planar type Darlington
For power amplification
Unit: mm
s
Features
q
q
q
q
Extremely satisfactory linearity of the forward current transfer
ratio h
FE
High collector to base voltage V
CBO
Wide area of safe operation (ASO)
TO-220(c) type package enabling direct soldering of the radiating
fin to the printed circuit board, etc. of small electronic equipment.
(T
C
=25藲C)
Ratings
500
400
12
14
7
50
1.4
150
鈥?5 to +150
Unit
V
V
V
A
A
W
10.5鹵0.3
1.4
4.6鹵0.2
1.4鹵0.1
3.0鹵0.5 10.1鹵0.3
0.5鹵0.1
1.4鹵0.1
0.8鹵0.1
2.5鹵0.2
0.1
鈥?
+0.3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.54鹵0.3
1
2
3
2.54鹵0.3
1:Base
2:Collector
3:Emitter
TO鈥?20 Package(c)
Internal Connection
C
B
藲C
藲C
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Collector output capacitance
*
V
CEO(sus)
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
C
ob
Conditions
V
CB
= 500V, I
E
= 0
V
CE
= 400V, I
E
= 0
V
EB
= 12V, I
C
= 0
I
C
= 100mA, R
BE
=
鈭?/div>
V
CE
= 2V, I
C
= 2A
V
CE
= 2V, I
C
= 6A
I
C
= 7A, I
B
= 70mA
I
C
= 7A, I
B
= 70mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 7A, I
B1
= 70mA, I
B2
= 鈥?0mA,
V
CC
= 300V
V
CB
= 10V, I
E
= 0, f = 1MHz
X
L 10mH
min
typ
max
100
100
100
400
500
200
2.0
2.5
20
1.5
5.0
6.5
70
MHz
碌s
碌s
碌s
pF
Test circuit
50/60Hz
mercury relay
120鈩?/div>
5V
1鈩?/div>
15V
Y
G
1.5鹵0.3
1.5
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
V
V
1
1
2
