Power Transistors
2SD2605
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
s
Features
q
q
13.0鹵0.2
4.2鹵0.2
High collector to emitter V
CEO
Allowing supply with the radial taping
(T
C
=25藲C)
Ratings
200
150
6
3
2
20
2.0
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
5.0鹵0.1
10.0鹵0.2
1.0
90擄
2.5鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1.2鹵0.1
C1.0
2.25鹵0.2
18.0鹵0.5
Solder Dip
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
C1.0
1 2 3
2.5鹵0.2
2.5鹵0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
Conditions
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 50碌A(chǔ), I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 500碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 10V, I
C
= 400mA
V
CE
= 10V, I
C
= 400mA
I
C
= 500mA, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
20
200
150
6
60
50
1
1
V
V
MHz
240
min
typ
max
50
50
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
*
h
FE1
Rank classification
Q
60 to 140
P
100 to 240
Rank
h
FE1
1
1
2
