2SD2568
Transistors
Power Transistor (400V, 0.5A)
2SD2568
Features
1) High breakdown voltage.(BV
CEO
=400V)
Absolute maximum ratings
(Ta=25擄C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
400
400
7
0.5
10
150
鈭?5
to
+150
Unit
V
V
V
A
W(Tc=25擄C)
擄C
擄C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2568
CPT3
PQ
TL
2500
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current
transfer ratio
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
400
400
7
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
82
鈭?/div>
鈭?/div>
Typ.
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
鈭?/div>
13.5
8
Max.
鈭?/div>
鈭?/div>
鈭?/div>
10
10
0.5
1.0
270
鈭?/div>
鈭?/div>
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
V
V
鈭?/div>
MHz
pF
I
C
=
50碌A(chǔ)
I
C
=
1mA
I
E
=
50碌A(chǔ)
V
CB
=400
V
V
EB
=6
V
I
C
=100mA
,
I
B
=10mA
I
C
=100mA
,
I
B
=10mA
V
CE
/I
C
=
5V/50mA
V
CE
=
5V , I
E
=鈭?0mA
, f
=10
MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
Conditions
Transition frequency
Output capacitance
Rev.A
1/2
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