鈭?/div>
2.5
max
3.0
max
70
typ
120
typ
V
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
鹵0.1
B
C
E
5.45
鹵0.1
B
(7 0
鈩?
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1647)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2560
150
150
5
15
1
130(Tc=25擄C)
150
鈥?5to+150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Audio, Series Regulator and General Purpose
(Ta=25擄C)
Unit
5.0
鹵0.2
2.0
1.8
External Dimensions
MT-100(TO3P)
15.6
鹵0.4
9.6
4.8
鹵0.2
2.0
鹵0.1
碌
A
碌
A
19.9
鹵0.3
V
4.0
a
b
酶3.2
鹵0.1
鈭梙
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
0.65
+0.2
-0.1
1.4
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
40
R
L
(鈩?
4
I
C
(A)
10
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
10
I
B2
(mA)
鈥?0
t
on
(
碌
s)
0.8typ
t
stg
(
碌
s)
4.0typ
t
f
(
碌
s)
1.2typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
鈥?V
C E
Characteristics
(Typical)
15
V
CE
(sat ) 鈥?I
B
Characteristics
(Typical)
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
(V )
3
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
15
( V
CE
= 4V )
10mA
50mA
3mA
2m
A
1.5
mA
1 .0 m A
C ol l e c t o r C ur r e nt I
C
( A)
10
0.5mA
2
C ol l e c t o r C ur r en t I
C
( A )
0 .8 m A
10
Tem
p)
mp)
e Te
(Cas
25藲C
鈥?0藲
I
C
= .1 5 A
I
C
= .1 0A
1
I
C
= . 5A
5
0
0
2
4
6
0
0.2
0.5
1
5
10
50
100 200
0
0
125
藲
1
B as e - Em i t t o r Vo l t a g e V
BE
( V )
C (C
I
B
=0.3mA
5
C (C
ase
ase T
emp)
2
2.2
Co l l ec t or - Emi t t er V ol ta ge V
C E
(V)
Bas e C u r r e nt I
B
( m A)
(V
C E
=4 V )
50000
DC C u r r e nt Ga i n h
FE
DC C u r r e nt Ga i n h
FE
50000
12
5藲C
( V
C E
= 4V)
Transient Thermal Resistance
胃
j- a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j- a
鈥?t Characteristics
3.0
Typ
10000
5000
10000
5000
1.0
25
藲C
0.5
鈥?0
藲C
1000
500
02
0. 5
1
C ol l ec t or C urr en t I
C
(A )
5
10
15
1000
500
02
0.5
1
C o ll e ct o r Cu r r e n t I
C
( A)
5
10
15
0.1
1
10
100
Time t(ms)
1 0 00 20 0 0
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
= 1 2 V )
80
Safe Operating Area
(Single Pulse)
13 0
Pc 鈥?Ta Derating
M a xim u m P o we r D i s s i p at i o n P
C
( W )
Cu t-o ff Fr e q u e n c y f
T
( M H
Z
)
60
10 0
W
ith
In
fin
ite
he
40
at
si
nk
50
20
0
鈥?.02 鈥?.05 鈥?01
鈥? .5
鈥?
鈥?
鈥?0
3. 5
0
Without Heatsink
0
25
50
75
100
125
150
Em i t t er C u rre nt I
E
(A)
A m bi en t T e m p e r a t ur e T a ( 藲 C )
158
SANKEN
1
