鈩?/div>
)
E
Silicon NPN Triple Diffused Planar Transistor
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2558
200
200
6
5
2
60(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Series Regulator and General Purpose
(Ta=25擄C)
Unit
External Dimensions
FM100(TO3PF)
0.8
鹵0.2
15.6
鹵0.2
5.5
鹵0.2
3.45
鹵0.2
5.5
酶3.3
鹵0.2
1.6
碌
A
23.0
鹵0.3
V
9.5
鹵0.2
mA
a
b
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
鹵0.1
1.5
4.4
5.45
鹵0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
鈥?V
CE
Characteristics
(Typical)
5
I
B
= 1 .
25
0
mA
V
CE
( sat ) 鈥?I
B
Characteristics
(Typical)
I
C
鈥?V
B E
Temperature Characteristics
(Typical)
5
( V
C E
= 4V )
0A
50
mA
10
mA
4
C o l l e c t o r C u r r e n t I
C
( A )
3
1.2m
A
C ol l e c t o r C u r r e nt I
C
( A)
2.5
mA
4
3
p)
mp)
em
(Cas
(C
0.3m
1
as
A
0
0
2
4
6
0
0
1
25藲C
1
鈥?0藲C (C
12
5藲C
ase Tem
2
2
eT
e Te
p)
0.6m
A
2
2.5
Colle ct o r- Em i t t er V ol ta ge V
C E
(V)
Ba s e - E m i t to r V ol t ag e V
BE
( V)
( V
C E
= 5 V)
8000
5000
D C Cu rr en t Ga i n h
F E
藲C
125
C
25藲
鈥?0
藲C
Transient Thermal Resistance
胃
j -a
( 藲 C / W )
h
FE
鈥?I
C
Characteristics
(Typical)
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
胃
j - a
鈥?t Characteristics
5.0
1000
500
100
50
1.0
0.5
0.3
10
5
0.02
0 .1
0. 5
1
5
1
5
10
50 100
Time t(ms)
500 1000 2000
Co l le c to r Cu r r en t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
30
Safe Operating Area
(Single Pulse)
60
Pc 鈥?Ta Derating
10
Co llec t o r C u r r e n t I
C
( A )
5
Ma xi mu m P o we r D i s s i p a ti o n P
C
( W )
40
1
0 .5
Without Heatsink
Natural Cooling
0 .1
0.05
5
10
50
10 0
30 0
20
Without Heatsink
3.5
0
0
25
50
75
10 0
125
150
Co l le c to r - Em it t er Vo l ta ge V
C E
( V)
A m b i e n t T em p e r a tu r e T a ( 藲 C )
3.0
1m
s
W
ith
In
fin
ite
he
at
si
nk
157
SANKEN
1
