鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
:
<
0.5 V
6.5
鹵0.1
5.3
鹵0.1
4.35
鹵0.1
2.3
鹵0.1
0.5
鹵0.1
7.3
鹵0.1
1.8
鹵0.1
0.8 max.
2.5
鹵0.1
0.75
鹵0.1
2.3
鹵0.1
4.6
鹵0.1
1.0
鹵0.1
0.1
鹵0.05
0.5
鹵0.1
(5.3)
(4.35)
(3.0)
I
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
=
25擄C
T
a
=
25擄C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
Rating
130
80
7
10
5
10
1
150
鈭?5
to
+150
擄C
擄C
Unit
1
(1.8)
2
3
1.0
鹵0.2
V
V
V
A
A
W
1: Base
2: Collector
3: Emitter
U Type Package
Internal Connection
C
B
E
Junction temperature
Storage temperature
I
Electrical Characteristics
T
C
=
25擄C
鹵
3擄C
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Note) *: Rank classification
Rank
h
FE2
P
130 to 260
Q
90 to 180
*
Conditions
V
CB
=
100 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
1 mA, I
B
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
2 A
I
C
=
4 A, I
B
=
0.2 A
I
C
=
4 A, I
B
=
0.2 A
V
CE
=
10 V, I
C
= 鈭?/div>
0.5 A, f
=
10 MHz
I
C
=
2 A, I
B1
=
0.2 A, I
B2
= 鈭?/div>
0.2 A
V
CC
=
50 V
Min
Typ
Max
10
50
Unit
碌A(chǔ)
碌A(chǔ)
V
80
45
90
260
0.5
1.5
30
0.5
1.5
0.15
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
V
V
MHz
碌s
碌s
碌s
(5.5)
1
1
