Power Transistors
2SD2549
Silicon NPN triple diffusion planar type
For power amplification
Unit: mm
s
Features
q
q
q
15.0鹵0.5
High forward current transfer ratio h
FE
which has satisfactory
linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
80
80
6
5
3
20
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
9.9鹵0.3
3.0鹵0.5
4.6鹵0.2
2.9鹵0.2
蠁3.2鹵0.1
13.7鹵0.2
4.2鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
1.4鹵0.2
1.6鹵0.2
0.8鹵0.1
2.6鹵0.1
0.55鹵0.15
1
2
2.54鹵0.3
3 5.08鹵0.5
1:Gate
2:Drain
3:Source
TO鈥?20D Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 70V, V
BE
= 0
V
CE
= 70V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 0.375A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= 鈥?0.1A,
V
CC
= 50V
30
0.5
4.5
0.5
80
70
10
1.8
0.7
V
V
MHz
碌s
碌s
碌s
250
min
typ
max
100
100
1
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
1
1
2
