Power Transistors
2SD2544
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s
q
q
q
5.0鹵0.1
Features
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Allowing supply with the radial taping
(T
C
=25藲C)
Ratings
60
60
7
8
4
15
2
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
2.5鹵0.2
C1.0
10.0鹵0.2
1.0
13.0鹵0.2
4.2鹵0.2
90擄
2.5鹵0.2
1.2鹵0.1
18.0鹵0.5
Solder Dip
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
C1.0
2.25鹵0.2
0.35鹵0.1
0.65鹵0.1
1.05鹵0.1
0.55鹵0.1
0.55鹵0.1
1 2 3
2.5鹵0.2
1:Base
2:Collector
3:Emitter
MT4 Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
EB
= 7V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.8A
V
CE
= 2V, I
C
= 2A
I
C
= 2A, I
B
= 50mA
I
C
= 2A, I
B
= 50mA
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 50mA, I
B2
= 鈥?0mA,
V
CC
= 50V
70
0.5
3.6
1.1
60
500
60
0.5
1.5
V
V
MHz
碌s
碌s
碌s
1000
2000
min
typ
max
10
10
Unit
碌A(chǔ)
碌A(chǔ)
V
FE1
Rank classification
Q
P
Rank
h
FE1
500 to 1200 800 to 2000
1
1
2
3
