鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
:
<
2.5 V
2.5
鹵0.1
1.2
鹵0.1
1.48
鹵0.2
90擄
C 1.0
2.25
鹵0.2
18.0
鹵0.5
Solder Dip
0.65
鹵0.1
0.65
鹵0.1
0.35
鹵0.1
1.05
鹵0.1
0.55
鹵0.1
0.55
鹵0.1
I
Absolute Maximum Ratings
T
C
=
25擄C
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
T
C
=
25擄C
T
a
=
25擄C
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
Rating
100
100
5
10
5
15
2
150
鈭?5
to
+150
擄C
擄C
Unit
V
V
V
A
A
W
2.5
鹵0.2
2.5
鹵0.2
1 2 3
1: Base
2: Collector
3: Emitter
MT-4 Package
Internal Connection
C
B
Junction temperature
Storage temperature
E
I
Electrical Characteristics
T
C
=
25擄C
鹵
2擄C
Parameter
Collector cutoff current
Symbol
I
CBO
I
CEO
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
I
EBO
V
CEO
h
FE1
h
FE2
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
=
100 V, I
E
=
0
V
CE
=
80 V, I
B
=
0
V
EB
=
5 V, I
C
=
0
I
C
=
10 mA, I
B
=
0
V
CE
=
4 V, I
C
=
2 A
V
CE
=
4 V, I
C
=
4 A
I
C
=
2 A, I
B
=
2 mA
I
C
=
4 A, I
B
=
16 mA
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
I
C
=
4 A, I
B
=
16 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
4 A, I
B1
=
16 mA, I
B2
= 鈭?6
mA
V
CC
=
50 V
20
0.27
2.9
1.0
100
2 000
500
1.5
2.5
2.5
V
V
V
MHz
碌s
碌s
碌s
15 000
Min
Typ
Max
100
100
5
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
1
1
