Power Transistors
2SD2527
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
Unit: mm
s
Features
q
q
q
9.9鹵0.3
3.0鹵0.5
4.6鹵0.2
2.9鹵0.2
High foward current transfer ratio h
FE
Satisfactory linearity of foward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
80
60
6
8
4
1
40
2.0
150
鈥?5 to +150
Unit
V
V
V
A
A
A
W
藲C
藲C
15.0鹵0.5
蠁3.2鹵0.1
13.7鹵0.2
4.2鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
1.4鹵0.2
1.6鹵0.2
0.8鹵0.1
2.6鹵0.1
0.55鹵0.15
1
2
2.54鹵0.3
3 5.08鹵0.5
1:Base
2:Collector
3:Emitter
TO鈥?20D Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Storage time
(T
C
=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE*
V
CE(sat)
f
T
t
stg
Conditions
V
CB
= 80V, I
E
= 0
V
CE
= 40V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 0.8A
I
C
= 3A, I
B
= 0.075A
V
CE
= 12V, I
C
= 0.3A, f = 10MHz
I
C
= 3A, I
B1
= 0.06A, I
B2
= 鈥?0.06A, V
CC
= 50V
30
20
60
500
2000
0.7
V
MHz
碌s
min
typ
max
100
100
100
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
*
h
FE
Rank classification
Q
P
Rank
h
FE
500 to 1200 800 to 2000
1
1
2
