Power Transistors
2SD2523
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5鹵0.5
蠁3.2鹵0.1
Unit: mm
3.0鹵0.3
s
Features
q
q
4.5
10.0
5擄
5擄
q
q
q
Incorporating a built-in damper diode
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
(T
C
=25藲C)
Ratings
1700
1700
5
6
15
4
鈥?
90
3
150
鈥?5 to +150
Unit
V
V
V
A
A
A
A
W
藲C
藲C
26.5鹵0.5
2.0 1.2
5擄
5擄
5擄
18.6鹵0.5
4.0
2.0鹵0.2
1.1鹵0.1
2.0
0.7鹵0.1
5.45鹵0.3
5.45鹵0.3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Reverse peak base current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
*
Non-repetitive
3.3鹵0.3
0.7鹵0.1
5擄
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP*
I
BP
I
BP
P
C
T
j
T
stg
1
2
3
Internal Connection
C
B
2.0
5.5鹵0.3
1:Base
2:Collector
3:Emitter
TOP鈥?E Full Pack Package
E
peak
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
(T
C
=25藲C)
Symbol
I
CBO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1700V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 1.6A
I
C
= 5A, I
B
= 1.6A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 5A, I
Bend
= 1.6A, L
leak
= 5碌H
I
C
= 6A, I
B
= 0
3
12
0.8
鈥?
5
6
3
25
10
5
1.5
V
V
MHz
碌s
碌s
V
min
typ
max
50
1
Unit
碌A(chǔ)
mA
V
23.4
22.0鹵0.5
1
1
2
