鈩?/div>
)
E
Silicon NPN Triple Diffused Planar Transistor
(Complement to type 2SB1625)
s
Absolute maximum ratings
(Ta=25擄C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2494
110
110
5
6
1
60(Tc=25擄C)
150
鈥?5 to +150
Unit
V
V
V
A
A
W
擄C
擄C
Application :
Audio, Series Regulator and General Purpose
(Ta=25擄C)
Unit
External Dimensions
FM100(TO3PF)
0.8
鹵0.2
15.6
鹵0.2
5.5
鹵0.2
3.45
鹵0.2
5.5
酶3.3
鹵0.2
1.6
碌
A
23.0
鹵0.3
V
9.5
鹵0.2
碌
A
a
b
MHz
pF
1.75
2.15
1.05
+0.2
-0.1
5.45
鹵0.1
1.5
4.4
5.45
鹵0.1
1.5
0.65
+0.2
-0.1
3.3
0.8
鈭梙
FE
Rank
O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
30
R
L
(鈩?
6
I
C
(A)
5
V
BB1
(V)
10
V
BB2
(V)
鈥?
I
B1
(mA)
5
I
B2
(mA)
鈥?
t
on
(
碌
s)
0.8typ
t
stg
(
碌
s)
6.2typ
t
f
(
碌
s)
1.1typ
3.35
B
C
E
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
C
鈥?V
C E
Characteristics
(Typical)
A
1m
V
CE
( sat ) 鈥?I
B
Characteristics
(Typical)
C ol l e c t o r - E m i tt e r S at u r a t i o n V o lt a g e V
C E(s a t)
(V )
3
I
C
鈥?V
BE
Temperature Characteristics
(Typical)
6
( V
CE
=4 V )
6
5mA
0.
5
mA
0 .4 m A
0. 3m A
C o l l ec to r C u r r e n t I
C
( A)
4
0.2m A
C o l l ec t or C u r r e n t I
C
( A )
2
4
Tem
p)
I
C
= 5 A
p)
Cas
e
2
1
I
C
= 3 A
2
e Tem
藲C (
25藲C
I
B
=0.1mA
0
0
2
4
6
0
0 .1
0.5
1
5
10
50
100
0
0
1
鈥?0藲C
125
(Case
(Cas
Temp
)
2
3.0
2 .5
Co l l ec t or - Emi t t e r V ol ta ge V
C E
(V)
Bas e C ur r en t I
B
( m A)
B a s e - Em i t t o r Vo l t a g e V
BE
( V )
h
FE
鈥?I
C
Characteristics
(Typical)
(V
C E
=4 V)
40000
D C Cu rr en t G ai n h
FE
h
F E
鈥?I
C
Temperature Characteristics
(Typical)
( V
C E
= 4 V)
40000
D C C u r r e n t G ai n h
FE
Transient Thermal Resistance
胃
j- a
( 藲 C /W )
5
胃
j - a
鈥?t Characteristics
Typ
10000
5000
10000
5000
1 2 5藲 C
2 5藲 C
1000
500
鈥?30 藲 C
1
1000
500
200
0.02
0.5
1
5
10
5 0 10 0
Time t(ms)
5 0 0 1 0 0 0 20 0 0
0. 1
0. 5
1
5 6
100
0.02
0.1
0. 5
1
56
C ol l ec t or C u rre nt I
C
(A )
Co l le c to r Cu r r en t I
C
( A)
f
T
鈥?I
E
Characteristics
(Typical)
(V
C E
=1 2 V)
80
20
Safe Operating Area
(Single Pulse)
60
Pc 鈥?Ta Derating
Typ
10
5
10
60
Co lle ct o r C u r r e n t I
C
( A)
M ax im um P ow e r D i s s i p a t i o n P
C
( W )
10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
W
m
D
ith
s
C
0m
s
40
In
fin
ite
he
40
1
0.5
Without Heatsink
Natural Cooling
0.1
at
si
nk
20
20
Without Heatsink
5
10
50
1 00
20 0
3.5
0
0
25
50
75
100
125
150
0
鈥?.02
鈥?0. 1
鈥?
鈥?
0 .0 5
3
Emi t t e r Cu rre nt I
E
( A)
C ol l ec t or - Em i tt e r Vol t ag e V
C E
( V)
A m b i en t T e m p e r a t ur e T a ( 藲 C )
154
SANKEN
1
