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2SD2479R Datasheet

  • 2SD2479R

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  • PANASONIC

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Power Transistors
2SD2479
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
10.8
鹵0.2
7.5
鹵0.2
3.8
鹵0.2
4.5
鹵0.2
鈻?/div>
Features
鈥?/div>
High forward current transfer ratio h
FE
鈥?/div>
Allowing supply with the radial taping
0.65
鹵0.1
2.5
鹵0.1
0.85
鹵0.1
1.0
鹵0.1
0.8 C
90藲
0.8 C
16.0
鹵1.0
0.7
鹵0.1
0.7
鹵0.1
1.15
鹵0.2
1.15
鹵0.2
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
120
100
5
2
3
1.5
150
鈭?5
to
+150
Unit
V
V
V
A
A
W
擄C
擄C
0.5
鹵0.1
0.8 C
1
2
3
2.05
鹵0.2
0.4
鹵0.1
2.5
鹵0.2
2.5
鹵0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
B
C
E
鈮?/div>
200
鈩?/div>
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
*1
*1
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
I
C
= 100
碌A(chǔ),
I
E
= 0
I
C
= 1 mA, I
B
= 0
I
E
= 100
碌A(chǔ),
I
C
= 0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
V
CE
=
10 V, I
C
=
1 A
I
C
=
1 A, I
B
=
1 mA
I
C
=
1 A, I
B
=
1 mA
V
CB
=
10 V, I
E
= 鈭?0
mA, f
=
200 MHz
Min
120
100
5
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
V
V
MHz
0.1
1
4 000
40 000
1.5
2
150
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
S
4 000 to 10 000 8 000 to 20 000 16 000 to 40 000
Publication date: February 2003
SJD00269BED
1

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