Power Transistors
2SD2465, 2SD2465A
Silicon NPN epitaxial planar type
For low-voltage switching
Complementary to 2SB1603
Unit: mm
s
Features
q
q
q
4.6鹵0.2
蠁3.2鹵0.1
9.9鹵0.3
2.9鹵0.2
15.0鹵0.3
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2465
2SD2465A
2SD2465
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
40
50
20
40
5
8
4
25
2
150
鈥?5 to +150
Unit
V
4.1鹵0.2 8.0鹵0.2
Solder Dip
3.0鹵0.2
Low collector to emitter saturation voltage V
CE(sat)
High-speed switching
Full-pack package superior in insulation, which can be installed
to the heat sink with one screw
13.7
鈥?.2
+0.5
1.2鹵0.15
1.45鹵0.15
0.75鹵0.1
2.54鹵0.2
5.08鹵0.4
1 2 3
2.6鹵0.1
0.7鹵0.1
emitter voltage 2SD2465A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
A
A
W
藲C
藲C
7擄
1:Base
2:Collector
3:Emitter
TO鈥?20E Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SD2465
2SD2465A
2SD2465
2SD2465A
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 40V, I
E
= 0
V
CB
= 50V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 2V, I
C
= 0.1A
V
CE
= 2V, I
C
= 1A
I
C
= 2A, I
B
= 0.1A
I
C
= 2A, I
B
= 0.1A
V
CE
= 5V, I
C
= 0.5A, f = 10MHz
I
C
= 2A, I
B1
= 0.2A, I
B2
= 鈥?0.2A,
V
CC
= 20V
120
0.2
0.5
0.1
20
40
45
90
260
0.5
1.5
V
V
MHz
碌s
碌s
碌s
min
typ
max
50
50
50
Unit
碌A(chǔ)
碌A(chǔ)
V
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE2
Rank classification
Q
90 to 180
P
130 to 260
Rank
h
FE2
1
1
2
3
