Transistor
2SD2460
Silicon NPN epitaxial planer type
For low-frequency output amplification
Unit: mm
4.0鹵0.2
s
Features
q
q
q
0.7鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
20
20
15
1.5
0.7
300
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 15V, I
E
= 0
V
CE
= 15V, I
B
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
*
I
C
= 500mA, I
B
= 50mA
*
V
CB
= 20V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
20
20
15
1000
0.15
55
10
*
min
typ
max
1
10
2.0鹵0.2
marking
+0.2
0.45鈥?.1
15.6鹵0.5
High foward current transfer ratio h
FE
.
Low collector to emitter saturation voltage V
CE(sat)
.
Allowing supply with the radial taping.
3.0鹵0.2
Unit
碌A(chǔ)
碌A(chǔ)
V
V
V
2500
0.4
V
MHz
15
pF
Pulse measurement
1
1
2
