Transistor
2SD2457
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
s
Features
q
q
q
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
1.0
鈥?.2
+0.1
High collector to emitter voltage V
CEO
.
Large collector power dissipation P
C
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6鹵0.1
0.4max.
45擄
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
50
40
5
3
1.5
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
1Y
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1
h
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CBO
V
CEO
h
FE*1
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 5V, I
E
= 0
I
C
= 1mA, I
E
= 0
I
C
= 2mA, I
B
= 0
V
CE
= 5V, I
C
= 1A
*2
I
C
= 1.5A, I
B
= 0.15A
*2
I
C
= 2A, I
B
= 0.2A
*2
V
CB
= 5V, I
E
= 鈥?.5A
*2
, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
150
45
*2
min
typ
max
1
100
10
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
50
40
80
120
220
1
1.5
MHz
pF
Pulse measurement
FE
Rank classification
Q
80 ~ 160
R
120 ~ 220
Rank
h
FE
2.5鹵0.1
+0.25
V
V
1
1
2
