Transistor
2SD2416
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
s
q
q
q
q
Features
High foward current transfer ratio h
FE
.
60V zener diode built in between collector and base.
Darlington connection.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6鹵0.1
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
0.4max.
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
3.0鹵0.15
3
2
1
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
60
鈥?0
60
鈥?0
5
1.5
1
+25
+25
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
*
Unit
V
V
V
A
A
W
藲C
藲C
B
1:Base
2:Collector
3:Emitter
marking
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
1T
Internal Connection
C
1
150
鈥?5 ~ +150
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(Ta=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
V
CE
= 10V, I
C
= 1.0A
*
I
C
= 1.0A, I
B
= 1.0mA
*
I
C
= 1.0A, I
B
= 1.0mA
*
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
150
*2
min
typ
max
1
2
Unit
碌A(chǔ)
mA
V
V
50
50
6500
85
85
40000
1.8
2.2
MHz
Pulse measurement
2.5鹵0.1
+0.25
V
V
1
1
2
