2SD2414(SM)
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Unit: mm
路
Low collector saturation voltage: V
CE (sat)
= 0.5 V (max) (at I
C
= 4 A)
Maximum Ratings
(Ta = 25擄C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25擄C
Tc = 25擄C
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
100
80
5
7
1
1.5
40
150
鈭?5
to 150
Unit
V
V
V
A
A
W
擄C
擄C
JEDEC
JEITA
TOSHIBA
Weight: 1.4 g (typ.)