Power Transistors
2SD2374, 2SD2374A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1548 and 2SB1548A
Unit: mm
s
Features
q
q
q
15.0鹵0.5
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
(T
C
=25藲C)
Ratings
60
80
60
80
6
5
3
25
2
150
鈥?5 to +150
Unit
9.9鹵0.3
3.0鹵0.5
4.6鹵0.2
2.9鹵0.2
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SD2374
2SD2374A
2SD2374
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
蠁3.2鹵0.1
13.7鹵0.2
4.2鹵0.2
1.4鹵0.2
1.6鹵0.2
0.8鹵0.1
2.6鹵0.1
V
0.55鹵0.15
emitter voltage 2SD2374A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
1
2
2.54鹵0.3
3 5.08鹵0.5
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
TO鈥?20D Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Emitter cutoff
current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
*
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 0.375A
V
CE
= 10V, I
C
= 0.5A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= 鈥?0.1A,
V
CC
= 50V
min
typ
max
200
200
300
300
1
Unit
碌A(chǔ)
碌A(chǔ)
mA
V
2SD2374
2SD2374A
2SD2374
2SD2374A
60
70
10
1.8
1.2
30
0.5
2.5
0.4
250
V
V
MHz
碌s
碌s
碌s
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
1
1
2
