Power Transistors
2SB1548, 2SB1548A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2374 and 2SD2374A
s
Features
q
q
q
Unit: mm
15.0鹵0.5
s
Absolute Maximum Ratings
Parameter
Collector to
base voltage
Collector to
2SB1548
2SB1548A
2SB1548
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
鈥?0
鈥?0
鈥?0
鈥?0
鈥?
鈥?
鈥?
25
2
150
鈥?5 to +150
Unit
V
蠁3.2鹵0.1
13.7鹵0.2
4.2鹵0.2
1.4鹵0.2
1.6鹵0.2
0.8鹵0.1
3.0鹵0.5
High forward current transfer ratio h
FE
which has satisfactory linearity
Low collector to emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with
one screw
9.9鹵0.3
4.6鹵0.2
2.9鹵0.2
2.6鹵0.1
emitter voltage 2SB1548A
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
V
V
0.55鹵0.15
1
2
A
A
W
藲C
藲C
2.54鹵0.3
3 5.08鹵0.5
1:Base
2:Collector
3:Emitter
TO鈥?20D Full Pack Package
s
Electrical Characteristics
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
2SB1548
2SB1548A
2SB1548
2SB1548A
2SB1548
2SB1548A
(T
C
=25藲C)
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
I
C
= 鈥?A, I
B1
= 鈥?0.1A, I
B2
= 0.1A
Conditions
V
CE
= 鈥?0V, V
BE
= 0
V
CE
= 鈥?0V, V
BE
= 0
V
CE
= 鈥?0V, I
B
= 0
V
CE
= 鈥?0V, I
B
= 0
V
EB
= 鈥?V, I
C
= 0
I
C
= 鈥?0mA, I
B
= 0
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
V
CE
= 鈥?V, I
C
= 鈥?A
I
C
= 鈥?A, I
B
= 鈥?0.375A
V
CE
= 鈥?0V, I
C
= 鈥?0.5A, f = 10MHz
30
0.5
1.2
0.3
鈥?0
鈥?0
70
10
鈥?.8
鈥?.2
V
V
MHz
碌s
碌s
碌s
250
V
min
typ
max
鈥?00
鈥?00
鈥?00
鈥?00
鈥?
Unit
碌A(chǔ)
碌A(chǔ)
mA
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
*
h
FE1
Rank classification
Q
70 to 150
P
120 to 250
Rank
h
FE1
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the rank classification.
1
1
2
