Transistor
2SD2321
Silicon NPN epitaxial planer type
For low-frequency power amplification
Unit: mm
4.0鹵0.2
s
Features
q
q
0.7鹵0.1
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
(Ta=25藲C)
Ratings
40
20
7
5
8
400
150
鈥?5 ~ +150
Unit
V
V
V
A
A
mW
藲C
藲C
1:Emitter
2:Collector
3:Base
1
2
3
1.27 1.27
2.54鹵0.15
EIAJ:SC鈥?2
New S Type Package
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
V
EB
= 7V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 0.5A
*2
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
20
7
230
150
0.28
150
26
*2
min
typ
max
0.1
1.0
0.1
2.0鹵0.2
marking
+0.2
0.45鈥?.1
15.6鹵0.5
Low collector to emitter saturation voltage V
CE(sat)
.
Satisfactory operation performances at high efficiency with the
low-voltage power supply.
3.0鹵0.2
Unit
碌A(chǔ)
碌A(chǔ)
碌A(chǔ)
V
V
600
1.0
V
MHz
50
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
230 ~ 380
R
340 ~ 600
Rank
h
FE1
1
1
2
3
