2SD2318
Transistors
High-current gain Power Transistor
(60V, 3A)
2SD2318
!Features
1) High DC current gain.
2) Low saturation voltage.
(Typ. V
CE
(sat) =0.5V at I
C
/ I
B
=2A / 0.5A)
3) Complements the 2SB1639.
!
External dimensions
(Units : mm)
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
5.1
6.5
C0.5
1.0
0.5
0.5
1.5
2.5
9.5
!
Absolute maximum ratings
(Ta=25擄C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
80
60
6
3
4.5
1
15
150
-55~+150
Unit
V
V
V
A
A(Pulse)
W
W(Tc=25藲C)
藲C
藲C
ROHM : CPT3
EIAJ : SC-63
*
*
Single pulse Pw=100ms
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SD2318
CPT3
UV
TL
2500
!
Electrical characteristics
(Ta=25擄C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
Cob
Min.
80
60
6
-
-
-
-
560
-
-
Typ.
-
-
-
-
-
-
-
-
50
60
Max.
-
-
-
100
100
1.0
1.5
1800
-
-
Unit
V
V
V
碌A
碌A
V
V
-
MHz
pF
I
C
=50碌A
I
C
=1mA
I
E
=50碌A
V
CB
=80V
V
EB
=6V
I
C
/I
B
=2A/0.05A
I
C
/I
B
=2A/0.05A
V
CE
/I
C
=4V/0.5A
V
CE
=5V,
I
E
=-0.2A,
f=10MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
Conditions
*
*
*
*
Measured using pulse current.
2.3
0.8Min.
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
1
