Transistor
2SD2260
Silicon NPN triple diffusion planer type
For high breakdown voltage general amplification
Unit: mm
6.9鹵0.1
1.05 2.5鹵0.1
(1.45)
鹵0.05
0.8
q
q
q
0.45
鈥?.05
+0.1
(Ta=25藲C)
1
2
3
0.45
鈥?.05
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
2.5鹵0.5
2.5鹵0.5
+0.1
Ratings
400
400
5
100
70
600
150
鈥?5 ~ +150
Unit
V
V
V
mA
mA
mW
藲C
藲C
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT1 Type Package
2.5鹵0.1
(HW type)
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
I
CEO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 100V, I
E
= 0
V
CE
= 100V, I
B
= 0
I
C
= 100碌A(chǔ), I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
50
400
5
60
0.4
80
4
10
220
1.2
V
MHz
pF
min
typ
max
2
2
Unit
碌A(chǔ)
碌A(chǔ)
V
V
*
h
FE
Rank classification
Q
60 ~ 150
R
100 ~ 220
h
FE
Rank
14.5鹵0.5
0.85
High collector breakdown voltage.
Low collector to emitter saturation voltage V
CE(sat)
.
Allowing supply with the radial taping.
0.65 max.
1.0
3.5鹵0.1
0.8
s
Features
0.15
0.7
4.0
1
1
2
3
