Transistor
2SD2225
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1473
6.9鹵0.1
0.15
Unit: mm
1.05 2.5鹵0.1
鹵0.05
(1.45)
0.8
0.5
4.5鹵0.1
0.45
鈥?.05
2.5鹵0.1
0.7
4.0
s
Features
q
q
q
0.65 max.
1.0 1.0
High collector to emitter voltage V
CEO
of 120V.
Optimum for low-frequency driver amplification.
Allowing supply with the radial taping.
0.2
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
120
120
5
1
0.5
1
150
鈥?5 ~ +150
1cm
2
Unit
V
V
V
A
A
W
藲C
藲C
1
2
3
Note: In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
1:Emitter
2:Collector
3:Base
MT2 Type Package
1.2鹵0.1
0.65
max.
0.45
+0.1
鈥?0.05
Printed circuit board: Copper foil area of
thickness of 1.7mm for the collector portion
or more, and the board
+0.1
s
Absolute Maximum Ratings
0.45
鈥?.05
+0.1
(Ta=25藲C)
2.5鹵0.5
2.5鹵0.5
(HW type)
s
Electrical Characteristics
Parameter
Collector to emitter voltage
Emitter to base voltage
(Ta=25藲C)
Symbol
V
CEO
V
EBO
h
FE1*1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 0.1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
V
CE
= 5V, I
C
= 100mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
*2
V
CB
= 10V, I
E
= 0, f = 1MHz
min
120
5
90
50
100
0.15
0.9
200
11.5
*2
typ
max
14.5鹵0.5
Unit
V
V
330
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
1
1.2
V
V
MHz
20
pF
Pulse measurement
*1
h
FE1
Rank classification
Q
90 ~ 155
R
130 ~ 220
S
185 ~ 330
Rank
h
FE1
1
1
2
