Power Transistors
2SD2220
Silicon NPN triple diffusion planar type Darlington
For low-frequency amplification
7.5鹵0.2
Unit: mm
4.5鹵0.2
10.8鹵0.2
s
Features
q
3.8鹵0.2
90擄
0.65鹵0.1
0.85鹵0.1
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation (T
C
=25擄C)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
100
80
5
1.5
1
1.5
150
鈥?5 to +150
Unit
V
V
V
A
A
W
藲C
藲C
B
1
2
3
2.5鹵0.2
0.8C
16.0鹵1.0
Suitable for the driver circuit of a motor, a printer hammer and
like that, since this transistor is designed for the high forward
current transfer ratio h
FE
A shunt resistor is omitted from the driver
Allowing supply with the radial taping
2.5鹵0.1
1.0鹵0.1
0.8C
0.7鹵0.1
0.7鹵0.1
0.8C
0.5鹵0.1
2.5鹵0.2
0.4鹵0.1
2.05鹵0.2
1:Emitter
2:Collector
3:Base
MT3 Type Package
Internal Connection
C
E
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
V
BE(sat)
f
T
Conditions
V
CB
= 25V, I
E
= 0
V
EB
= 4V, I
C
= 0
I
C
= 100碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100碌A(chǔ), I
C
= 0
V
CE
= 10V, I
C
= 1A
I
C
= 1A, I
B
= 1mA
I
C
= 1A, I
B
= 1mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
150
100
80
5
4000
20000
1.8
2.2
V
V
MHz
min
typ
max
100
100
Unit
nA
nA
V
V
V
*
h
FE
Rank classification
Q
R
Rank
h
FE
4000 to 10000 8000 to 20000
1
1
2
