DATA SHEET
DARLINGTON POWER TRANSISTOR
2SD2217
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2217 is a mold power transistor developed for low-
frequency power amplifiers and low-speed switching.
pulse motor drivers and relay drivers in OA and FA equipment.
This
transistor is ideal for direct driving from the IC out to drivers such as
PACKAGE DRAWING (UNIT: mm)
QUALITY GRADES
鈥?Standard
Please refer to 鈥淨(jìng)uality Grades on NEC Semiconductor Devices鈥?/div>
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25擄C)
擄
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25擄C)
P
T
(Ta = 25擄C)
T
j
T
stg
Ratings
300
300
7
300
600
30
25
2.0
150
鈭?5
to +150
Unit
V
V
V
mA
Electrode Connection
mA
mA
W
W
擄C
擄C
1. Base (B)
2. Collector (C)
3. Emitter (E)
* PW
鈮?/div>
10 ms, duty cycle
鈮?/div>
50%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16140EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
漏
2002
1998
NEC
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2
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