0.10 max.
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
C
ob
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
= 10 V, I
C
= 2 mA
V
CE
= 2 V, I
C
= 100 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
180
90
0.1
150
3.5
0.3
V
MHz
pF
Min
60
50
7
0.1
100
390
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
5藲
(0.375)
Publication date: January 2003
SJC00249CED
1
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