Power Transistors
2SD2209
Silicon NPN triple diffusion planar type Darlington
Unit: mm
7.0鹵0.3
3.5鹵0.2
For power amplification and switching
7.2鹵0.3
0.8鹵0.2
3.0鹵0.2
1.0鹵0.2
q
I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
10.0
鈥?.
+0.3
s
Features
1.1鹵0.1
0.75鹵0.1
0.85鹵0.1
0.4鹵0.1
2.3鹵0.2
4.6鹵0.4
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power T
C
=25擄C
dissipation
Ta=25擄C
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
(T
C
=25藲C)
Ratings
100鹵15
100鹵15
5
8
4
15
1.3
150
鈥?5 to +150
Unit
V
1
2
3
1:Base
2:Collector
3:Emitter
I Type Package
3.5鹵0.2
2.0鹵0.2
7.0鹵0.3
Unit: mm
0 to 0.15
V
V
10.2鹵0.3
A
A
W
3.0鹵0.2
7.2鹵0.3
1.0 max.
2.5
0.75鹵0.1
1.1鹵0.1
0.5 max.
0.9鹵0.1
0 to 0.15
藲C
1
2
3
藲C
2.3鹵0.2
4.6鹵0.4
s
Electrical Characteristics
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
(T
C
=25藲C)
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
h
FE2*1
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b*2
Conditions
V
CB
= 85V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 5mA, I
B
= 0
V
CE
= 3V, I
C
= 0.5A
V
CE
= 3V, I
C
= 3A
I
C
= 3A, I
B
= 12mA
I
C
= 5A, I
B
= 20mA
I
C
= 3A, I
B
= 12mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 3A, I
B1
= 12mA, I
B2
= 鈥?2mA,
V
CC
= 50V
I
C
= 1A, L = 100mH, R
BE
= 100鈩?/div>
*2
E
s/b
1:Base
2:Collector
3:Emitter
I Type Package (Y)
min
typ
max
100
2
Unit
碌A(chǔ)
mA
V
85
1000
1000
115
10000
2
4
2.5
20
0.3
3.0
1.0
50
V
V
MHz
碌s
碌s
碌s
mJ
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
*1
h
FE2
Rank classification
Q
P
Test circuit
I
B1
V
in
T.U.T
I
C
鈥揑
B2
L coil
Internal Connection
C
Rank
h
FE2
1000 to 5000 2000 to 10000
t
W
V
CC
B
Vclamp
E
2.5鹵0.2
1.0
2.5鹵0.2
1.0
1
1
2
3
