Transistor
2SD2185
Silicon NPN epitaxial planer type
For low-frequency output amplification
Complementary to 2SB1440
Unit: mm
s
q
q
Features
Low collector to emitter saturation voltage V
CE(sat)
.
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
2.6鹵0.1
4.5鹵0.1
1.6鹵0.2
1.5鹵0.1
0.4max.
45擄
1.0
鈥?.2
+0.1
0.4鹵0.08
0.5鹵0.08
1.5鹵0.1
4.0
鈥?.20
0.4鹵0.04
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
*
(Ta=25藲C)
Ratings
50
50
5
4
3
1
150
鈥?5 ~ +150
Unit
V
V
V
A
A
W
藲C
藲C
1:Base
2:Collector
3:Emitter
3
3.0鹵0.15
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
marking
EIAJ:SC鈥?2
Mini Power Type Package
Marking symbol :
1H
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
s
Electrical Characteristics
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
(Ta=25藲C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10碌A(chǔ), I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10碌A(chǔ), I
C
= 0
V
CE
= 2V, I
C
= 200mA
V
CE
= 2V, I
C
= 1.0A
I
C
= 1A, I
B
= 50mA
I
C
= 1A, I
B
= 50mA
V
CB
= 10V, I
E
= 鈥?0mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHZ
50
50
5
120
80
0.15
0.82
110
23
*2
min
typ
max
0.1
Unit
碌A(chǔ)
V
V
V
340
0.3
1.2
MHz
35
pF
Pulse measurement
*1
h
FE1
Rank classification
Rank
h
FE1
R
120 ~ 240
1HR
S
170 ~ 340
1HS
Marking Symbol
2.5鹵0.1
+0.25
V
V
1
1
2
